SEFsim: A Statistically-Guided Fast DRAM Simulator

In academia and industry, computer architects rely heavily on performance models for design space exploration. However, performance models are now experiencing longer simulation times due to the increasing design complexity of modern computing systems. DDR memory, a critical component in a computing system, requires an accurate performance model to properly evaluate the instructions per cycle (IPC). However, a detailed DRAM simulator models each DDR event and, therefore, contributes a considerable simulation time. This paper proposes Satistically-guided Epoch-evolving Fixed-latency Simulator (SEFsim), an approximate and fast DRAM simulation model, to significantly improve the simulation speed. The key design principle of SEFsim is to statistically capture the performance model of DRAM using a large number of patterns, enabling the model to accurately predict the latency and behavior of new workloads. Based on our evaluation using a detailed memory model and 10 workloads, SEFsim captures the original model with 96.16% accuracy while speeding up the simulation by 10.3X and 8.25 % in the standalone and full system evaluations, respectively.

@inproceedings{adak2024sefsim,
  author    = {Debpratim Adak and Hyokeun Lee and Ben Feinberg and Gwendolyn Voskuilen and Clayton Hughes and Huiyang Zhou and Amro Awad},
  title     = {{SEFsim: A Statistically-Guided Fast DRAM Simulator}},
  booktitle = {IEEE International Symposium on Performance Analysis of Systems and Software (ISPASS)},
  year      = {2024},
  month     = {may},
  address   = {Indianapolis, IN, USA},
  doi       = {10.1109/ISPASS61541.2024.00039}
}